DMC2710UVT-13 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMC2710UVT-13

Description:

MOSFET BVDSS: 8V-24V TSOT26

Stock:

8861

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.02

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Parameters

Current at 25 ° C - continuous drain (Id)

1.2A(Ta),900mA(Ta)

Drain source voltage (Vdss)

20V

FET Type

N and P Channel Complementary type

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

0.1pC @ 4.5V,0.7pC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

42pF @ 16V,49pF @ 16V

On resistance (maximum) for different Ids and Vgs

400 mΩ @ 600mA,4.5V,700 mΩ @ 430mA,4.5V

Power - maximum

500mW(Ta)

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-6 ,TSOT-23-6

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMC2710UVT-13（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8861,Price reference "real-time change" China/Hongkong。 DMC2710UVT-13 package/specs, Download DMC2710UVT-13、Datasheet。